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Proactive Row Buffer Management for LPDDR2-NVM Devices
출처
대한전자공학회
발행일
2019-12-31
분야분류
IT소재부품, 해외동향, 전자정보디바이스, IT부품정보, IT부품정보 네트워크, 부품,
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LPDDR2-NVM has been announced as an industry standard to efficiently interface the emerging non-volatile memory devices such as phase change memory (PCM). This standard interface has been adopted in most commercial PCM devices. However, existing PCM research has less addressed or overlooked this standard interface under assumption that it is similar to conventional DRAM interface. Unlike the conventional DRAM interface, the row buffer architecture specified in LPDDR2-NVM has several unique features in order to support the different characteristics of PCM operation. In this paper, we devise a proactive row buffer management for enhancing the performance with almost negligible implementation overhead, targeting LPDDR2-NVM compatible memory devices. Our extensive simulations demonstrate 12.2% performance enhancement and 0.3% energy reduction of memory system, on average, with fairly small cost overheads.