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미스트화학기상증착시스템의 전구체 수용액 혼합비 조절을 통한 (AlxGa1-x)2O3 에피박막의 밴드갭 특성 제어 연구
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한국전기전자재료학회
발행일
2019-11-01
분야분류
해외동향, 전자정보디바이스, IT부품정보, IT부품정보 네트워크,
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We investigated the growth of (AlxGa1-x)2O3 thin films on c-plane sapphire substrates that were grown by mist chemical vapor deposition (mist CVD). The precursor solution was prepared by mixing and dissolving source materials such as gallium acetylacetonate and aluminum acetylacetonate in deionized water. The [Al]/[Ga] mixing ratio (MR) of the precursor solution was adjusted in the range of 0~4.0. The Al contents of (AlxGa1-x)2O3 thin films were increased from 8 to 13% with the increase of the MR of Al. As a result, the optical bandgap of the grown thin films changed from 5.18 to 5.38 eV. Therefore, it was determined that the optical bandgap of grown (AlxGa1-x)2O3 thin films could be effectively engineered by controlling Al content.