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High-performance light emission from III–nitride stress/dislocation control
출처
Semiconductor Today
발행일
2018-12-10
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IT소재부품, 해외동향, 전자정보디바이스, LED, IT부품정보, IT부품정보 네트워크, 부품, GreenIT,
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Researchers in China have used stress and dislocation control measures to improve the performance of III–nitride on silicon light-emitting diode (LED) performance in terms of high output power and low forward voltage [Yuan Li et al, Journal of Alloys and Compounds, vol771, p1000, 2019]. Of course, such material can also serve as the basis for III–N electronics taking advantage of high voltage and high frequency handling capabilities.
Growth on silicon reduces costs in terms of the material itself and from mass manufacturing on large-diameter substrates, compared with sapphire, silicon carbide and free-standing or bulk gallium nitride.