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Boosting InGaN LEDs on silicon with tensile stress
Semiconductor Today
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South China University of Technology has improved the performance of indium gallium nitride (InGaN) light-emitting diodes (LEDs) on silicon through increasing tensile stress in the photon-generating active region [Zhiting Lin et al, J. Appl. Phys., vol122, p204503, 2017]. Although stress engineering has been a critical factor in enabling III-nitrides to be grown on low-cost silicon, overcoming 16.9% lattice and 54% thermal mismatching, the researchers note that the effect of stress on “performance of LEDs by modifying the band structure and the carrier recombination process, seems to be neglected”.