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Questioning carrier distributions in III-nitride LEDs
출처
Semiconductor Today
발행일
2018-04-02
분야분류
IT소재부품, 해외동향, 전자정보디바이스, LED, IT부품정보, IT부품정보 네트워크, 부품, GreenIT,
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University of Bath and University of Cambridge in the UK have reinterpreted the ABC model of recombination in indium gallium nitride (InGaN) multiple quantum well (MQW) light-emitting diodes (LEDs) to suggest that the carrier distribution across the wells is more uniform than presently believed [M. A. Hopkins et al, J. Appl. Phys., vol122, p234505, 2017]. In particular, the reinterpreted model is used to study the variation of the modified constants with the number of wells of fabricated LEDs.