- Questioning carrier distributions in III-nitride LEDs
- Semiconductor Today
University of Bath and University of Cambridge in the UK have reinterpreted the ABC model of recombination in indium gallium nitride (InGaN) multiple quantum well (MQW) light-emitting diodes (LEDs) to suggest that the carrier distribution across the wells is more uniform than presently believed [M. A. Hopkins et al, J. Appl. Phys., vol122, p234505, 2017]. In particular, the reinterpreted model is used to study the variation of the modified constants with the number of wells of fabricated LEDs.