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Deep ultraviolet photonic crystal of AlGaN nanowires
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Semiconductor Today
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2018-02-28
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Researchers based in the USA and Canada have used selective area epitaxy to develop arrays of aluminium gallium nitride (AlGaN) nanowires for deep ultraviolet (DUV) light emission [Xianhe Liu et al, Optics Express, vol25, p30494, 2017]. The team from University of Michigan in the USA and McGill University and McMaster University in Canada hope that their work will lead to more efficient DUV photonics. At present, AlGaN-based light-emitting diodes achieve external quantum efficiencies much less than 10%.